Polarization anisotropy in strained quantum-wire structures considering the strain relaxation effect

Author

Maruyama, Takeo ; Haque, Anisul ; Arai, Shigehisa

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

Volume

1

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

43

Abstract

Polarization dependences of spontaneous emission spectrum of strained quantum wires (Q-wire) are studied theoretically considering the effects of strain relaxation in vertically stacked multiple wires. An anomalous dependence of polarization anisotropy on compressive strain in active regions, barrier tensile strain, wire width and the number of vertically stacked layers is predicted which may be explained in terms of band mixing due to strain relaxation.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor device models; semiconductor lasers; semiconductor quantum wires; spontaneous emission; GaInAsP-InP; band mixing; barrier tensile strain; compressive strain; polarization anisotropy; spontaneous emission spectrum; strain relaxation effect; strained quantum-wire structures; vertically stacked multiple wires; Anisotropic magnetoresistance; Buildings; Capacitive sensors; Indium phosphide; Optical polarization; Semiconductor diodes; Semiconductor lasers; Spontaneous emission; Tellurium; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1251591

Filename

1251591