Transient interferometric mapping of temperature and free carriers in semiconductor devices

Author

Pogany, D. ; Bychikhin, S. ; Dubec, V. ; Blaho, M. ; Litzenberger, M. ; Kuzmik, J. ; Pflugl, C. ; Strasser, G. ; Gornik, E.

Author_Institution

Inst. for Solid State Electron., Vienna Univ. of Technol., Austria

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

666

Abstract

Backside transient interferometric mapping (TIM) techniques, based on focused-beam and holographic probing, are reviewed. Self-heating and free carrier effects in Si electrostatic discharge protection/power devices and III-V devices are investigated with ns time resolution.

Keywords

III-V semiconductors; carrier density; electrostatic discharge; elemental semiconductors; holographic interferometry; optical testing; power semiconductor devices; probes; silicon; transient analysis; III-V devices; Si; Si electrostatic discharge protection; TIM technique; backside transient interferometric mapping; focused-beam probing; free carrier; holographic probing; power devices; self-heating effect; semiconductor device; temperature carrier; Electrostatic discharge; Holography; Laser beams; Optical pulses; Phase measurement; Phase shifting interferometry; Plasma temperature; Probes; Protection; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1252976

Filename

1252976