Effect of implant temperature on electrical characteristics of implanted monocrystalline-emitter bipolar transistors

Author

Sargunas, V. ; Thiefain, P. ; Singh, Ashutosh ; Taduri, S. ; Melosky, S.

fYear

2002

fDate

27-27 Sept. 2002

Firstpage

143

Lastpage

146

Abstract

Strong effect on the gain of implanted monocrystalline emitter transistor was seen due to a disk temperature increase caused by reduced cooling. Observed changes were quite significant, causing product out of tolerance condition at temperatures below the ones normally causing resist blistering. The mechanism for the observed phenomena is proposed, based upon reduced TED and change in amorphization dose at elevated temperature. SIMS profiles of As⁺ after implant and anneal are provided. The importance of precise temperature control for a narrow base implanted monocrystalline emitter bipolar transistor is highlighted and process control techniques are proposed.

Keywords

annealing; bipolar transistors; ion implantation; secondary ion mass spectra; semiconductor doping; temperature control; SIMS profiles; amorphization dose; disk temperature; electrical characteristics; gain; implant temperature; implanted monocrystalline-emitter bipolar transistors; narrow base implanted monocrystalline emitter bipolar transistor; precise temperature control; reduced cooling; resist blistering; Annealing; Bipolar transistors; Cooling; Electric variables; Implants; Process control; Radio access networks; Resists; Temperature; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Conference_Location

Taos, New Mexico, USA

Print_ISBN

0-7803-7155-0

Type

conf

DOI

10.1109/IIT.2002.1257959

Filename

1257959