DocumentCode
400856
Title
Dose monitoring of heavy ion implantation by Therma-Wave signal
Author
Sano, Makoto ; Harada, Masaaki ; Kabasawa, Mitsuaki ; Sato, Fumiaki ; Sugitani, P.
fYear
2002
fDate
27-27 Sept. 2002
Firstpage
248
Lastpage
251
Abstract
Dosimetry of ion implantation is monitored mainly by Therma-Wave (TW) signals for low-medium dose ranges. Repeatability and uniformity of TW signals for indium (In) and antimony (Sb) implantation were researched in order to improve dose monitoring accuracy. It was found that TW signals were influenced considerably by implant conditions, wafer surface status, and TW measurement parameters. Because TW signals have high dose sensitivity in some ranges of In and Sb implantation, TW signals became a good tool of dose monitoring of such heavy ions by establishing appropriate management of the above conditions.
Keywords
antimony; doping profiles; indium; ion implantation; semiconductor doping; In; Sb; Therma-Wave signal; dose monitoring; heavy ion implantation; high dose sensitivity; implant conditions; low-medium dose ranges; repeatability; uniformity; wafer surface status; Annealing; Atmospheric measurements; Curve fitting; Dosimetry; Implants; Indium; Ion beams; Ion implantation; Manufacturing; Monitoring;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location
Taos, New Mexico, USA
Print_ISBN
0-7803-7155-0
Type
conf
DOI
10.1109/IIT.2002.1257985
Filename
1257985
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