Dose theory and pressure compensation on Axcelis GSD high current implanter

Author

Kraupner, J. ; Kyek, Andreas ; Vogl, J. ; Weiss, Steven

fYear

2002

fDate

27-27 Sept. 2002

Firstpage

260

Lastpage

263

Abstract

Neutralization of ions by charge changing interactions with gas in the beam line or end station of ion implant systems may lead to wrong dose and bad uniformity on the processed wafers. In this paper the dosimetry and the pressure compensation on Axcelis GSD high current implanter are discussed based on detailed analysis of dose_dat files. Theoretical models for pressure compensation are reviewed together with a new model in order to describe the pressure compensation as a function of dopant and energy. A alternative method of determination of pressure compensation factor pcomp is given, and problems in practice and results from residual gas analysis are discussed.

Keywords

ion implantation; semiconductor doping; Axcelis GSD high current implanter; bad uniformity; beam line; charge changing interaction; dose theory; dosimetry; end station; pressure compensation; pressure compensation factor; processed wafers; residual gas analysis; wrong dose; Current measurement; Dosimetry; Filters; Implants; Ion beams; Resists; Semiconductor device modeling; Semiconductor process modeling; Temperature; Vacuum systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Conference_Location

Taos, New Mexico, USA

Print_ISBN

0-7803-7155-0

Type

conf

DOI

10.1109/IIT.2002.1257988

Filename

1257988