DocumentCode
400870
Title
Performance of RF plasma flood gun for medium current implanter
Author
Hamamoto, Nariaki ; Sakai, Shin´ichi ; Ikejiri, T. ; Tanjyo, Masayasu
fYear
2002
fDate
27-27 Sept. 2002
Firstpage
307
Lastpage
310
Abstract
We have developed a new PFG apparatus using a RF discharge. In this paper, we show the performance of the PFG under the typical implantation condition in medium ion implanter. The measured charging characteristics with CHARM2™ and MOS capacitor TEG surpass those of the conventional PFG with filament. Also the present PFG doesn´t degrade other implantation qualities such as dose uniformity, dose shift and metal contamination. In addition, the absence of filament can reduce the maintenance time. The aimed running time is more than 2,000 hours.
Keywords
ion implantation; ion sources; plasma sources; semiconductor doping; 2000 h; CHARM2™; MOS capacitor TEG; RF plasma flood gun; dose shift; dose uniformity; maintenance time; medium current implanter; metal contamination; running time; Contamination; Electrons; Floods; MOS capacitors; Magnetic fields; Magnetic separation; Plasma immersion ion implantation; Plasma stability; Power supplies; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location
Taos, New Mexico, USA
Print_ISBN
0-7803-7155-0
Type
conf
DOI
10.1109/IIT.2002.1258000
Filename
1258000
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