• DocumentCode
    400890
  • Title

    Development of new antimony and indium dopants for ion implantation

  • Author

    Wang, Zhen ; McMahon, C.N. ; Xu, Changsheng ; Baum, T.H. ; Mayer, Jonas ; Wang, Lingfeng

  • fYear
    2002
  • fDate
    27-27 Sept. 2002
  • Firstpage
    399
  • Lastpage
    402
  • Abstract
    Three antimony and indium compounds, CH3SbBr2, (SbCl3)·[SbCl3·S(CH3)2] and (hfac)In(CH3)2 were synthesized and characterized by spectroscopic methods. These compounds are highly volatile with excellent thermal stability. CH3SbBr2 contains only one carbon that may minimize carbon incorporation. (SbCl3)·[SbCl3·S(CH3)2] is a new volatile dimeric compound. (hfac)In(CH3)2 is an air and moisture stable compound and is readily sublimed at room temperature. These compounds show promise for use as ion implant dopants.
  • Keywords
    antimony compounds; indium compounds; ion implantation; organometallic compounds; thermal stability; vaporisation; (SbCl3)·[SbCl3·S(CH3)2]; (hfac)In(CH3)2; CH3SbBr2; antimony dopant; carbon incorporation minimization; highly volatile compounds; indium dopant; ion implant dopants; ion implantation; room temperature sublimation; thermal decomposition; thermal stability; volatile dimeric compound; volatility; Business; Carbon compounds; Cleaning; Implants; Indium compounds; Ion implantation; Moisture; Temperature; Thermal decomposition; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
  • Conference_Location
    Taos, New Mexico, USA
  • Print_ISBN
    0-7803-7155-0
  • Type

    conf

  • DOI
    10.1109/IIT.2002.1258024
  • Filename
    1258024
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=400890