• DocumentCode
    401463
  • Title

    In-plane polarization dependence of gain in strained quantum-wire lasers with strain-compensating barriers

  • Author

    Haque, Anisul ; Maruyama, Takeo ; Yagi, Hideki ; Sano, Takuya ; Arai, Shigehisa

  • Author_Institution
    Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
  • fYear
    2003
  • fDate
    14-16 Oct. 2003
  • Firstpage
    7
  • Lastpage
    8
  • Abstract
    In-pane polarization dependence of gain in compressively strained quantum-wire (Q-wire) lasers with strain-compensating barriers (SC) is investigated. Strained Q-wire lasers with SC barriers and a cavity normal to wire axis should provide minimum transparency carrier density. In moderately wide Q-wires, highest peak material gain is obtained with lattice-matched barriers when the cavity is parallel to the wire axis. Polarization dependence of the gain in the presence of elastic strain relaxation shows non-trivial dependence on wire width due to a complicated interaction between elastic strain relaxation and quantum size effects.
  • Keywords
    carrier density; quantum well lasers; semiconductor quantum wires; size effect; cavity; elastic strain relaxation; in-plane polarization; lattice-matched barriers; material gain; quantum size effect; strain-compensating barriers; strained quantum-wire lasers; transparency carrier density; Capacitive sensors; Charge carrier density; Indium phosphide; Laser modes; Laser theory; Optical polarization; Spontaneous emission; Tellurium; Wire; Yagi-Uda antennas;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on
  • Print_ISBN
    0-7803-7992-6
  • Type

    conf

  • DOI
    10.1109/NUSOD.2003.1259027
  • Filename
    1259027