DocumentCode
402238
Title
Ka-band coplanar low-noise amplifier design with power PHEMTs
Author
Long, Sabine ; Escotte, Laurent ; Graffeuil, Jacques ; Fellon, Philippe ; Roques, Daniel
Author_Institution
LAAS CNRS, Univ. Paul Sabatier, Toulouse, France
Volume
1
fYear
2003
fDate
7-9 Oct. 2003
Firstpage
17
Abstract
The design of a coplanar lownoise amplifier (LNA) is presented in this paper. Pseudomorphic high electron mobility transistors (PHEMTs), optimized for power applications, are used in order to evaluate the potentiality of this technology for mixed-mode applications. The three stages amplifier noise figure is lower than 2.6 dB on the 27-31 GHz frequency band with a 20 dB power gain.
Keywords
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; field effect analogue integrated circuits; flip-chip devices; integrated circuit noise; power HEMT; 20 dB; 27 to 31 GHz; Ka-band coplanar low-noise amplifier design; MMIC amplifier; amplifier noise figure; flip-chip assembly; mixed-mode applications; power PHEMT; three stages amplifier; Circuit noise; Costs; Frequency; Heterojunctions; Low-noise amplifiers; Noise figure; Noise reduction; PHEMTs; Semiconductor device noise; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003. 33rd European
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMC.2003.1262207
Filename
1262207
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