A SiGe HEMT mixer IC with low conversion loss

Author

Kallfass, I. ; Gruson, F. ; Abele, P. ; Michelakis, K. ; Hackbarth, T. ; Hieber, K.-H. ; Müller, J. ; Schumacher, H.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

Volume

1

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

407

Abstract

The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating up to 10GHz RF, has been designed and realized using a 0.1 μm gate length transistor technology. The design is based on a new large-signal simulation model developed for the SiGe HEMT. Good agreement between simulation and measurement is reached. The mixer exhibits 4.0dB and 4.7dB conversion loss when down-converting 3.0GHz and 6.0GHz signals, respectively, to an intermediate frequency of 500MHz using high-side injection of 5dBm local oscillator power. Conversion loss is less than 8dB for RF frequencies up to 10GHz with a mixer linearity of -8.8dBm input related 1dB compression point.

Keywords

Ge-Si alloys; HEMT integrated circuits; MMIC mixers; circuit simulation; field effect MMIC; 10 GHz; HEMT mixer integrated circuit; MMIC; SiGe; active mixer stage; dynamic device model; high-side injection; large-signal simulation model; local oscillator power; low conversion loss; single-balanced Gilbert cell; Circuit simulation; Frequency conversion; Germanium silicon alloys; HEMTs; Integrated circuit measurements; Integrated circuit technology; Local oscillators; Mixers; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262307

Filename

1262307