DocumentCode
402438
Title
Compact low phase-noise 23 GHz VCO fabricated in a commercial SiGe bipolar process
Author
Hancock, Timothy M. ; Gresham, Ian ; Rebeiz, Gabriel M.
Author_Institution
Radiat. Lab., Univ. of Michigan, Ann Arbor, MI, USA
Volume
2
fYear
2003
fDate
7-9 Oct. 2003
Firstpage
575
Abstract
The design, implementation and measurement of a differential monolithic SiGe VCO at 22.8 GHz is presented. The VCO was designed for a 3.5 V supply voltage with the oscillator core consuming 22 mA. The circuit area is very compact occupying an area of 230 μm×290 μ. The VCO has a measured average output power of 2.2 dBm and an average SSB phase noise of -104 dBc/Hz at 1 MHz offset from the carrier.
Keywords
bipolar MIMIC; bipolar transistors; elemental semiconductors; integrated circuit noise; microwave integrated circuits; microwave oscillators; phase noise; silicon compounds; voltage-controlled oscillators; 1 MHz; 2 mA; 23 GHz; 3.5 V; SiGe; bipolar transistor; differential monolithic VCO; low phase-noise; output power; supply voltage; Amplitude modulation; Circuits; Germanium silicon alloys; Noise measurement; Phase measurement; Power generation; Power measurement; Process design; Silicon germanium; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003. 33rd European
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMC.2003.1262956
Filename
1262956
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