3.5-watt AlGaN/GaN HEMTs and amplifiers at 35 GHz

Author

Wu, Y.-F. ; Moore, M. ; Saxler, A. ; Smith, P. ; Chavarkar, P.M. ; Parikh, P.

Author_Institution

Cree Santa Barbara Technol. Center, Goleta, CA, USA

fYear

2003

fDate

8-10 Dec. 2003

Abstract

Sub-0.2-/spl mu/m AlGaN/GaN HEMTs were successfully scaled to 1.05 mm gate-width with minor gain reduction. On-chip single-stage amplifiers exhibited gains of 8 dB and 7.5 dB, as well as output powers of 3.6 W and 3.5 W, at 30 GHz and 35 GHz, respectively. This multi-watt output power at millimeter-wave frequencies well exceeded previous state-of-the-art for a GaN HEMT and is comparable to that from 6-7 times larger GaAs-based devices.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave amplifiers; microwave field effect transistors; millimetre wave amplifiers; millimetre wave field effect transistors; semiconductor device measurement; 3.5 W; 3.6 W; 30 GHz; 35 GHz; 7.5 dB; 8 dB; AlGaN-GaN; AlGaN/GaN HEMT; AlGaN/GaN HEMT amplifiers; GaAs-based devices; GaN HEMT; HEMT scaling; gain reduction; gate-width; millimeter-wave frequencies; on-chip single-stage amplifier gain; output power; Aluminum gallium nitride; Fingers; Frequency; Gallium nitride; Grounding; HEMTs; MODFETs; Millimeter wave transistors; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269349

Filename

1269349