Slow-wave characteristics of interconnects on silicon substrates

This paper deals with slow-wave characteristics of interconnects on silicon substrates. In slow-wave mechanism, the microstrip lines with and without bottom-shielded ground structures (MIM structures and MIS structures) are characterized. Slow wave propagation in MIS structure occurs when the operation frequency is not so high and the substrate resistivity is moderate, effective permittivity increases and the propagation velocity slows down due to Maxwell-Wagner mechanism. The transmission line parameters such as series resistances and inductances are calculated as the function of frequency. Results shows that the silicon substrate of the non-shielded transmission line can be treated as imperfect ground plane and called as skin-effect mode.