Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band

Author

Tsai, Chia-Wei ; Shmavonyan, Gagik Sh ; Su, Yi-Shin ; Lin, Ching-Fuh

Author_Institution

Dept. of Phys., Nat. Taiwan Univ., Taipei, Taiwan

Volume

1

fYear

2003

fDate

15-19 Dec. 2003

Abstract

Superluminescent diodes with broad emission bandwidth characteristics and the mechanism of carrier distribution in the active layer are explored. Using InP substrate with five 6 nm InGaAsP quantum wells and two 15 nm InGaAs quantum wells, we get a very broad emission spectrum. The spectral width is nearly 400 nm, almost covering the range from 1250 nm to 1650 nm.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical fibre communication; semiconductor optical amplifiers; semiconductor quantum wells; superluminescent diodes; superradiance; 1250 to 1650 nm; 15 nm; 6 nm; InGaAs quantum well; InGaAsP quantum well; InGaAsP-InGaAs; InP; InP substrate; broad emission bandwidth characteristic; broad emission spectrum; broadband superluminescent diode; carrier distribution; optical communication band; semiconductor optical amplifier; spectral width; Bandwidth; Indium phosphide; Optical fiber communication; Optical waveguides; Physics; Semiconductor diodes; Semiconductor optical amplifiers; Substrates; Superluminescent diodes; Ultraviolet sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on

Print_ISBN

0-7803-7766-4

Type

conf

DOI

10.1109/CLEOPR.2003.1274532

Filename

1274532