A 98 GHz voltage controlled oscillator in SiGe bipolar technology

Author

Perndl, W. ; Knapp, H. ; Aufinger ; Meister, T.F. ; Simbürger, W. ; Scholt, A.L.

Author_Institution

Inst. of Commun. & Radio-Frequency Eng., Tech. Univ. of Vienna, Austria

fYear

2003

fDate

28-30 Sept. 2003

Firstpage

67

Lastpage

69

Abstract

In this paper two fully integrated voltage controlled oscillators (VCOs) in a 200GHz f_T SiGe bipolar technology are presented. The oscillators use on-chip transmission lines in their resonators and at the output for impedance transformation. One oscillator operates up to 98 GHz and achieves a phase noise of -97 dBc/Hz at an offset frequency of 1 MHz. It can be tuned from 95.2 GHz to 98.4 GHz and it consumes 12mA from a single -5 V supply. The second oscillator operates from 80.5 GHz up to 84.8 GHz with a phase noise of -98 dBc/Hz at 1 MHz offset frequency. These oscillation frequencies are the highest reported so far for fundamental-mode oscillators in silicon-based technologies.

Keywords

Ge-Si alloys; bipolar integrated circuits; integrated circuit design; voltage-controlled oscillators; -5 V; 1 MHz; 12 mA; 200 GHz; 80.5 to 84.8 GHz; 95.2 to 98.4 GHz; 98 GHz; SiGe; bipolar technology; impedance transformation; offset frequency; on-chip transmission lines; oscillation frequencies; phase noise; resonators; voltage controlled oscillator; Bipolar integrated circuits; Germanium alloys; Integrated circuit design; Silicon alloys; Voltage controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the

ISSN

1088-9299

Print_ISBN

0-7803-7800-8

Type

conf

DOI

10.1109/BIPOL.2003.1274937

Filename

1274937