Cryogenic performance of a 200 GHz SiGe HBT technology

Author

Banerjee, Bhaskar ; Venkataraman, Sunitha ; Lu, Yuan ; Nuttinck, Sebastien ; Heo, Deukhyoun ; Chen, Yi-Jan Emery ; Cressler, John D. ; Laskar, Joy ; Freeman, Greg ; Ahlgren, Dave

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2003

fDate

28-30 Sept. 2003

Firstpage

171

Lastpage

173

Abstract

The cryogenic performance of a 200 GHz SiGe HBT technology is presented for the first time. Measurements of the current-voltage, small-signal ac, and broadband noise characteristics of a 200 GHz SiGe HBT was made at 85K, 150K, 200K and 300K. At 85K, these SiGe HBTs maintain excellent dc ideality, with a peak current gain of 3800, a peak cut-off frequency of 250 GHz, and a minimum noise figure of approximately 0.30 dB at a frequency of 14 GHz, and in all cases represent improvements over their corresponding 300K values. These results suggest that aggressively-scaled SiGe HBT technology is well-suited for emerging cryogenic applications requiring extreme levels of transistor performance.

Keywords

cryogenic electronics; heterojunction bipolar transistors; low-temperature techniques; semiconductor device measurement; semiconductor device testing; silicon compounds; 0.30 dB; 120 K; 14 GHz; 150 K; 200 GHz; 200 K; 250 GHz; 300 K; 85 K; HBT technology; SiGe; broadband noise characteristics; cryogenic performance; current gain; current-voltage measurement; cut-off frequency; dc ideality; heterojunction bipolar transistor; noise figure; small-signal ac measurement; Cryogenic electronics; Heterojunction bipolar transistors; Semiconductor device testing; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the

ISSN

1088-9299

Print_ISBN

0-7803-7800-8

Type

conf

DOI

10.1109/BIPOL.2003.1274960

Filename

1274960