Quantum-well-intermixing induced shift in material bandgap and refractive index using low-energy ion implantation

Author

Pan, Yen-Ting ; Lee, San-Liang ; Xuan, Rong ; Yu, Yu-Chen

Author_Institution

Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan

Volume

2

fYear

2003

fDate

15-19 Dec. 2003

Abstract

We developed a semi-analytical model to analyze the induced change in optical parameters of InGaAsP/InGaAsP MQWs by phosphorus-implanted quantum well intermixing (QWI). The results match well with the experimental results and can be applied for realizing photonic integrated circuits.

Keywords

III-V semiconductors; chemical interdiffusion; energy gap; gallium arsenide; indium compounds; ion implantation; photoluminescence; refractive index; semiconductor doping; semiconductor quantum wells; InGaAs-InGaAsP; InGaAsP/InGaAsP MQWs; induced change; low-energy ion implantation; material bandgap; optical parameters; phosphorus-implanted quantum well intermixing; photonic integrated circuits; quantum-well-intermixing induced shift; refractive index; semianalytical model; Ion implantation; Optical materials; Optical refraction; Optical variables control; Particle beam optics; Photonic band gap; Photonic integrated circuits; Quantum well devices; Quantum wells; Refractive index;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on

Print_ISBN

0-7803-7766-4

Type

conf

DOI

10.1109/CLEOPR.2003.1277065

Filename

1277065