Optimised high voltage IGBTs for pulsed power applications

Author

Golland, A. ; Wakeman, F.J. ; Li, G.

Author_Institution

Westcode Semicond. Ltd., Chippendale, UK

Volume

1

fYear

2003

fDate

15-18 June 2003

Firstpage

131

Abstract

A new range of high voltage Insulated Gate Bi-polar Transistors (IGBTs) is presented which have been optimised for pulsed power applications. The devices, rated for blocking voltages up to 5.2 kV, are based on punch through (PT) technology and have been optimised to maximise forward transconductance. This optimisation allows the device to operate at very high levels of pulsed collector current when compared to conventional IGBT technology. The design, construction and performance of a fully integrated five terminal switch assembly based on the abovementioned device is then discussed.

Keywords

insulated gate bipolar transistors; optimisation; power semiconductor switches; pulsed power technology; 5.2 kV; IGBT; blocking voltages; five terminal switch assembly; forward transconductance; insulated gate bi-polar transistors; optimisation; pulsed collector current; pulsed power applications; punch through technology; Assembly; Current density; Insulated gate bipolar transistors; Petroleum; Power semiconductor devices; Power semiconductor switches; Pulse power systems; Semiconductor device packaging; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Pulsed Power Conference, 2003. Digest of Technical Papers. PPC-2003. 14th IEEE International

Conference_Location

Dallas, TX, USA

Print_ISBN

0-7803-7915-2

Type

conf

DOI

10.1109/PPC.2003.1277676

Filename

1277676