• DocumentCode
    406018
  • Title

    Frequency dependence of the second derivative of the currant-voltage characteristic of the heterostructure SnO2-Si at the gas adsorption [currant read as current]

  • Author

    Il´chenko, V.V. ; Kravchenko, Alex L. ; Telega, Vladymyr V. ; Chehun, Valery P. ; Gaskov, Alex M. ; Grinchenko, Vyktor T.

  • Author_Institution
    Dept. of Radiophys., Kiev Univ., Ukraine
  • Volume
    1
  • fYear
    2003
  • fDate
    22-24 Oct. 2003
  • Firstpage
    137
  • Abstract
    The opportunity of use nanostructural heterostructure n-SnO2(Ni)/p-Si as a gas sensitivity element is investigated. The second derivative of the current-voltage characteristic of the heterostructure under influence of changes of gas environment and temperature were studied.
  • Keywords
    gas sensors; nanostructured materials; semiconductor thin films; silicon; tin compounds; SnO2-Si; current-voltage characteristic derivative; frequency dependence; gas adsorption; gas environment; gas sensitivity element; heterostructure SnO2-Si; nanostructual heterostructure; Current measurement; Frequency dependence; Frequency measurement; Frequency modulation; Semiconductor diodes; Semiconductor thin films; Sensor phenomena and characterization; Signal analysis; Sputtering; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2003. Proceedings of IEEE
  • Print_ISBN
    0-7803-8133-5
  • Type

    conf

  • DOI
    10.1109/ICSENS.2003.1278914
  • Filename
    1278914
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=406018