DocumentCode
411822
Title
Optical nonlinearities of opposite sign from intersubband transitions in GaN quantum wells
Author
Chen, Gang ; Rapaport, Ronen ; Mitrofanov, Oleg ; Gmachl, Claire ; Ng, Hock M.
Author_Institution
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
fYear
2003
fDate
6-6 June 2003
Abstract
We show experimentally that the optical nonlinearities due to intersubband transitions in GaN quantum wells can have both signs, depending on the structure of choice. Nonlinear transmission measurements show strong, ultrafast induced absorption that may be used in future nonlinear optical devices.
Keywords
III-V semiconductors; gallium compounds; high-speed optical techniques; nonlinear optics; optical variables measurement; semiconductor quantum wells; wide band gap semiconductors; GaN; GaN quantum wells; intersubband transitions; nonlinear optical devices; nonlinear transmission measurements; ultrafast induced absorption; Absorption; Gallium nitride; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical pumping; Optical scattering; Optical superlattices; Probes; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-748-2
Type
conf
Filename
1297968
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