DocumentCode
411828
Title
Carrier confinement in 1300-nm InGaAsN quantum-well lasers
Author
Tansu, Nelson ; Yeh, Jeng-Ya ; Mawst, Luke J.
Author_Institution
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
fYear
2003
fDate
6-6 June 2003
Abstract
Theoretical and experimental analysis of carrier transport in high-performance 1300-nm InGaAsN QW lasers, indicate significant thermionic hole leakage. Experimental optimization of the InGaAsN QW lasers by suppressing the carrier leakage, results in an extremely-low threshold current density of only 440 A/cm/sup 2/ at temperatures of 90/spl deg/C.
Keywords
III-V semiconductors; carrier mobility; indium compounds; quantum well lasers; semiconductor lasers; 1300 nm; 90 C; InGaAsN; InGaAsN quantum-well lasers; QW lasers; carrier confinement; carrier leakage suppression; carrier transport; extremely-low threshold current density; thermionic hole leakage; Carrier confinement; Equations; Gallium arsenide; Laser theory; Optical materials; Quantum well lasers; Radiative recombination; Semiconductor lasers; Temperature sensors; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-748-2
Type
conf
Filename
1297975
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