Properties of CuI films in the power output of TiO/sub 2/|Dye|CuI cells

The transparent semiconducting copper iodide (CuI) films were deposited by pulsed laser deposition and their structural and optoelectrical properties in the power output of TiO/sub 2/|Dye|CuI cells are reported. These CuI films exhibited optical transmittance over 80% in the wavelength range from 400 to 900 nm and minimum resistivity of about 2 k/spl Omega/-cm. An efficient charge generation is observed through the illumination of TiO/sub 2/ layer of the fabricated p-CuI|Dye|n-TiO/sub 2/ cells. The cells performances have been given in the current-voltage (I-V) working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm/sup 2/, 25/spl deg/C). The maximum short circuit photo current density (J/sub sc/) of about 12.2 mA/cm/sup 2/ and open circuit photo voltage (V/sub oc/) of about 480 mV were obtained for the TiO/sub 2/|Dye|CuI cells with good reproducibility. The fill factor (FF) and power conversion efficiency (/spl eta/) were about 47.8% and 2.8%, respectively.