DocumentCode
413621
Title
9% efficiency: CIGS on Cu substrate
Author
Rechid, J. ; Thyen, R. ; Raitzig, A. ; Wulff, S. ; Mihhailova, M. ; Kalberlah, K. ; Kampmann, A.
Author_Institution
CIS Solartechnik GmbH, Hamburg, Germany
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
559
Abstract
The CIS Solartechnik is aiming at an industrial roll to roll process for the production of CIGS solar cells on metal substrates. For today we can report about a success concerning the efficiency. We are able to process ClGS solar cells on both Cu and stainless steel substrates with an efficiency of 9%. The absorber is synthesised by annealing the electrodeposited stacked metal layers of Cu, In and Ga. Se is added prior to the annealing by evaporation. The fabrication of high-efficiency CIGS absorber layers by mostly electrochemical methods is a challenge per se. The most challenging step, however, in realising cells on Cu substrates is to insert a barrier on top of the substrate which prevents the Cu from diffusion into the CIGS layer during annealing. In addition, this layer has to have good adhesion to both the CIGS layer and the Cu substrate.
Keywords
adhesion; annealing; chemical interdiffusion; copper compounds; diffusion barriers; electrodeposition; gallium compounds; indium compounds; semiconductor thin films; solar cells; ternary semiconductors; vacuum deposition; 9 percent; ClGS solar cells; Cu; Cu substrate; Cu(InGa)Se/sub 2/-Cu; absorber; adhesion; annealing; diffusion; efficiency; electrochemical method; electrodeposited stacked metal layer; evaporation; stainless steel substrate;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305345
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