DocumentCode
413700
Title
Performance instability in n-type PERT silicon solar cells
Author
Zhao, Jianhua ; Schmidt, J. ; Wang, Aihua ; Zhang, Guangchun ; Richards, Bryce S. ; Green, Martin A.
Author_Institution
Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, New South Wales Univ., Sydney, NSW, Australia
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
923
Abstract
PERT (passivated emitter, rear totally-diffused) cells on CZ and FZ n-type silicon substrates have demonstrated high efficiencies of 21.1% and 21.9%, respectively. Performance loss has been observed in these cells after over two-year storage. A further loss was observed when these cells were illuminated under one-sun intensity using ELH halogen projection lamps. The lightly doped boron emitters and strong surface depletion might be the cause for such loss, which appear to have an electrostatic origin and to be largely reversible.
Keywords
boron; elemental semiconductors; passivation; semiconductor doping; silicon; solar cells; 21.1 percent; 21.9 percent; ELH halogen projection lamp; Si:B; cell efficiency; lightly doped boron emitter; n-type PERT silicon solar cell; one-sun intensity; passivated emitter rear totally-diffused cell; performance instability; performance loss; surface depletion;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305433
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