15.12% silicon thin film solar cell on p/sup ++/ c-Si substrate prepared by RTCVD

Author

Xudong, Li ; Ying, Xu ; Wenjing, Wang ; Hui, Shen ; Yuwen, Zhao ; Benkun, Ma

Author_Institution

Beijing Solar Energy Res. Inst., China

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1279

Abstract

The thin film polycrystalline silicon solar cells have been fabricated on inactive P/sup ++/ mono-crystalline silicon substrates by rapid thermal CVD technique. With the graphite boat covered by pyrogenative graphite layer, the quality of the growth layer has been increased. By varying the thickness of the active layer, the best result was obtained at the thickness of 37 /spl mu/m with a 2 /spl mu/m depth p/sup ++/ buffer layer deposited simultaneously. The fill factor could be improved by a suitable annealing in forming gas ambience. The best conversion efficiency of 15.12% (AM1.5G, 24.5/spl deg/C )has been achieved without cell´s surface texture.

Keywords

annealing; chemical vapour deposition; elemental semiconductors; semiconductor epitaxial layers; semiconductor growth; silicon; solar cells; vapour phase epitaxial growth; 2 micron; 24.5 degC; 37 micron; P/sup ++/ monocrystalline silicon substrates; RTCVD; Si; active layer thickness; annealing; conversion efficiency; fill factor; p/sup ++/ buffer layer; pyrogenative graphite layer; rapid thermal CVD; surface texture; thin film polycrystalline silicon solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306153