P-type microcrystalline SiC fabricated by rf plasma CVD with 40-MHz excitation

We have been investigated p-type microcrystalline Si/sub 1-x/C/sub x/ (/spl mu/c-SiC) films fabricated by rf plasma CVD methods with excitation frequencies of 13.56 MHz as well as 40.68 MHz. The /spl mu/c-SiC films were deposited with a use of a new carbon source of C/sub 2/H/sub 6/ gas at a low substrate temperature on a glass substrate. Differences in structural, optical and electrical properties of the /spl mu/c-SiC films with an increase in the excitation frequency was discussed. Finally, a primary application of 40.68 MHz /spl mu/c-SiC to the window layer of low-temperature-grown poly-Si p-i-n thin film solar cells is demonstrated.