Microcrystalline-Si solar cells by newly developed novel PECVD method at high deposition rate

Author

Hakuma, H. ; Niira, K. ; Senta, H. ; Nishimura, T. ; Komoda, M. ; Okui, H. ; Aramaki, K. ; Okada, Y. ; Tomita, K. ; Higuchi, H. ; Arimune, H.

Author_Institution

Kyocera Corp., Shiga, Japan

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1796

Abstract

We have newly developed novel PECVD method which we call "Cat-PECVD method". This method has been developed to combine PECVD method and Cat-CVD method. Microcrystalline-Si (/spl mu/c-Si:H) films prepared by this method at high deposition rate of more than 1 nm/sec with low substrate temperature of less than 250/spl deg/C showed high quality compared with the films by conventional PECVD method. Applying these films for single junction /spl mu/c-Si:H solar cells, intrinsic cell efficiency of 8.1% at 1.2 nm/sec and 7.3% at 1.9 nm/sec were achieved. Besides, these cells showed good stability of no post-degradation and no light-induced degradation.

Keywords

amorphous semiconductors; catalysis; current density; elemental semiconductors; impurity distribution; infrared spectra; plasma CVD; secondary ion mass spectra; semiconductor growth; semiconductor thin films; silicon; solar cells; visible spectra; PECVD method; SIMS; Si; catalytic CVD method; current density; impurity distribution; infrared spectra; intrinsic cell efficiency; microcrystalline silicon solar cells; visible spectra;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306283