Magnetron sputtered zinc stannate films for silicon thin film solar cells

Author

Kluth, Oliver ; Agashe, Chitra ; Hupkes, Jürgen ; Muller, Joachim ; Rech, Bemd

Author_Institution

Inst. of Photovoltaics, Forschungszentrum Julich GmbH, Germany

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1800

Abstract

Zinc stannate films have been prepared by RF magnetron sputtering using a ZnO:SnO/sub 2/-target with 33 at.% SnO/sub 2/. The influence of total pressure and substrate temperature on the electrical film properties was studied. A minimum resistivity of 2.9/spl times/10/sup -3/ /spl Omega/cm could be achieved. All zinc stannate films exhibit amorphous structure independent of the deposition conditions. The stability in hydrogen plasma was investigated with XPS. Finally, the films were applied as buffer layer and back contact in amorphous and microcrystalline p-i-n solar cells.

Keywords

II-VI semiconductors; X-ray photoelectron spectra; amorphous semiconductors; electrical conductivity; electrical resistivity; elemental semiconductors; noncrystalline structure; semiconductor growth; semiconductor thin films; silicon; solar cells; sputter deposition; tin compounds; zinc compounds; 2.9/spl times/10/sup -3/ ohmcm; Si; XPS; ZnO:SnO/sub 2/; amorphous p-i-n solar cells; amorphous structure; back contact; buffer layer; electrical film properties; electrical resistivity; hydrogen plasma; magnetron sputtered zinc stannate films; microcrystalline p-i-n solar cells; silicon thin film solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306284