A-Si:H//spl mu/c-Si:H tandem solar cell by novel PECVD method

Author

Niira, K. ; Senta, H. ; Nishimura, T. ; Hakuma, H. ; Komoda, M. ; Okui, H. ; Aramaki, K. ; Okada, Y. ; Tomita, K. ; Higuchi, H.

Author_Institution

Kyocera Corp., Shiga, Japan

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1852

Abstract

Using newly developed novel PECVD method ("Cat-PECVD method"), high quality a-Si:H films and /spl mu/c-Si:H films were successfully formed at high deposition rate of more than 1nm/s with low substrate temperature of less than 250/spl deg/C. Applying these Si films for a-Si:H//spl mu/c-Si:H tandem solar cells, initial cell efficiency of 11.5% was obtained. Owing to a low Si-H/sub 2/ bonding state content and less distorted short range order structure of the a-Si:H film, the light-induced degradation rate of tandem cell was effectively reduced to less than 7%.

Keywords

amorphous semiconductors; elemental semiconductors; plasma CVD; semiconductor growth; semiconductor thin films; short-range order; silicon; solar cells; PECVD method; Si-H/sub 2/ bonding state; Si:H; amorphous Si:H thin films; amorphous Si:H/microcrystalline-Si:H tandem solar cell; deposition rate; light induced degradation rate; microcrystalline Si:H thin films; semiconductor growth; short range order structure; substrate temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306299