DocumentCode
413924
Title
Modelling long-term module performance based on realistic reporting conditions with consideration to spectral effects
Author
Williams, S.R. ; Betts, T.R. ; Helf, T. ; Gottschalg, R. ; Beyer, Hans Georg ; Infield, D.G.
Author_Institution
Dept. of Electron. & Electr. Eng., Loughborough Univ., UK
Volume
2
fYear
2003
fDate
18-18 May 2003
Firstpage
1908
Abstract
A model for the annual performance of different module technologies is presented that includes spectral effects. The model is based on the realistic reporting conditions but also allows for secondary spectral effects, as experienced by multi-junction devices. The model is validated against measurements taken at CREST and shows a good agreement for all devices. Combining this relatively simple model with ASPIRE, a spectral irradiance model based on standard meteorological measurements, allows the translation to other locations. The method is applied to measurements of different devices deployed in Loughborough University and the significance of certain effects is discussed.
Keywords
II-VI semiconductors; amorphous semiconductors; cadmium compounds; elemental semiconductors; semiconductor device models; silicon; solar cells; CdTe; Si-Si; long-term module performance modelling; module technology; multijunction devices; realistic reporting conditions; secondary spectral effects; solar cells; spectral irradiance model; standard meteorological measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1306312
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