DocumentCode
413933
Title
Degradation factor analysis of crystalline-Si PV modules through long-term field exposure test
Author
Morita, Kengo ; Inoue, Takamitsu ; Kato, Hiroshi ; Tsuda, Izumi ; Hishikawa, Yoshihiro
Author_Institution
Japan Electr. Safety & Environ. Technol. Labs., Tokyo, Japan
Volume
2
fYear
2003
fDate
18-18 May 2003
Firstpage
1948
Abstract
Degradation factors that affect the performance loss of crystalline-Si PV modules have been analyzed through long-term field exposure test, in order to contribute to the long-term reliability improvement. Tested PV modules were manufactured in the early 1990´s and many modules were stable for 10-12 years exposure. However, some of the modules showed the performance loss which exceeds 10% either due to discoloration caused by the delamination between the solar cell and EVA or due to increase of the series resistance caused by the cracks in electrode soldering. It is demonstrated that the signs of these degradations can be detected before the performance loss become significant by careful visual inspection or the temperature distribution inspection under forward bias condition.
Keywords
cracks; elemental semiconductors; inspection; photovoltaic cells; semiconductor device reliability; semiconductor device testing; silicon; solar cells; temperature distribution; EVA; cracks; crystalline silicon PV modules; degradation factor analysis; delamination; discoloration; electrode soldering; forward bias condition; long-term field exposure test; long-term reliability improvement; performance loss; series resistance; solar cell; temperature distribution inspection; visual inspection;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1306324
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