• DocumentCode
    413933
  • Title

    Degradation factor analysis of crystalline-Si PV modules through long-term field exposure test

  • Author

    Morita, Kengo ; Inoue, Takamitsu ; Kato, Hiroshi ; Tsuda, Izumi ; Hishikawa, Yoshihiro

  • Author_Institution
    Japan Electr. Safety & Environ. Technol. Labs., Tokyo, Japan
  • Volume
    2
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    1948
  • Abstract
    Degradation factors that affect the performance loss of crystalline-Si PV modules have been analyzed through long-term field exposure test, in order to contribute to the long-term reliability improvement. Tested PV modules were manufactured in the early 1990´s and many modules were stable for 10-12 years exposure. However, some of the modules showed the performance loss which exceeds 10% either due to discoloration caused by the delamination between the solar cell and EVA or due to increase of the series resistance caused by the cracks in electrode soldering. It is demonstrated that the signs of these degradations can be detected before the performance loss become significant by careful visual inspection or the temperature distribution inspection under forward bias condition.
  • Keywords
    cracks; elemental semiconductors; inspection; photovoltaic cells; semiconductor device reliability; semiconductor device testing; silicon; solar cells; temperature distribution; EVA; cracks; crystalline silicon PV modules; degradation factor analysis; delamination; discoloration; electrode soldering; forward bias condition; long-term field exposure test; long-term reliability improvement; performance loss; series resistance; solar cell; temperature distribution inspection; visual inspection;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1306324