Noise in CdTe resistors in a low frequency range: experimental and analytical study

This work describes the experimental and analytical studies of current noise spectral density at medium frequency in CdTe detectors. CdTe is a device of 2mm thick intrinsic II- VI semiconductor material between two metal plates of 2×20 mm² useful for the detection of high energy radiations. High atomic number and high stopping power are the main advantage of such a radiation detector. The band gap of CdTe is large and the intrinsic carrier concentration is low. The resistivity is high enough to operate the devices at room temperature The measured noise level in CdTe detectors indicates a noise level close to the shot noise. The following measures show that shot noise can exist in the CdTe resistors.