• DocumentCode
    415659
  • Title

    Neutron-induced SEU in bulk and SOI SRAMS in terrestrial environment

  • Author

    Baggio, J. ; Lambert, D. ; Ferlet-Cavrois, V. ; D´hose, C. ; Hirose, K. ; Saito, H. ; Palau, J.M. ; Saignè, F. ; Sagnes, B. ; Buard, N. ; Carrière, T.

  • Author_Institution
    CEA, France
  • fYear
    2004
  • fDate
    25-29 April 2004
  • Firstpage
    677
  • Lastpage
    678
  • Abstract
    In this work we compare the Soft Error Rate (SER) sensitivity of commercial bulk and SOI devices in the terrestrial neutron environment. The SOI parts exhibit very low SER values that we explain by using Monte Carlo simulations.
  • Keywords
    Monte Carlo methods; SRAM chips; integrated circuit modelling; integrated circuit reliability; neutron effects; radiation hardening (electronics); silicon-on-insulator; Monte Carlo simulations; SOI SRAMS; Soft Error Rate; neutron-induced SEU; single event upset; terrestrial environment; Atmosphere; Cosmic rays; DH-HEMTs; Error analysis; Laboratories; Low voltage; Neutrons; Performance evaluation; Random access memory; Single event upset;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
  • Print_ISBN
    0-7803-8315-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.2004.1315447
  • Filename
    1315447
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=415659