• DocumentCode
    416791
  • Title

    Electrical properties of PIP anti-fuse for the logic circuit configuration

  • Author

    Kim, P.J. ; Ku, D.S. ; Jeong, L.S. ; Yun, J.H. ; Choi, S.Y. ; Kim, J.B.

  • Author_Institution
    Sung-Hwa Coll., Gangjin, South Korea
  • Volume
    3
  • fYear
    2003
  • fDate
    4-6 Aug. 2003
  • Firstpage
    2980
  • Abstract
    Anti-fuse is used as the program switch element that selectively connects the logic blocks and the wire channels in FPGAs. A novel PIP anti-fuse structure consists of poly-Si/ONO/poly-Si layers. The anti-fuse showed a low on-state resistance of 140/spl sim/200 /spl Omega/. For the anti-fuse, the rupture voltage was about 7 V. The rupture time was very short time of 100/spl sim/500 ms.
  • Keywords
    PROM; electronic engineering computing; field programmable gate arrays; logic circuits; silicon; 100 to 500 ms; 140 to 200 ohm; 7 V; FPGA; antifuse; electrical properties; logic circuit configuration; program switch element;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SICE 2003 Annual Conference
  • Conference_Location
    Fukui, Japan
  • Print_ISBN
    0-7803-8352-4
  • Type

    conf

  • Filename
    1323856