DocumentCode
416791
Title
Electrical properties of PIP anti-fuse for the logic circuit configuration
Author
Kim, P.J. ; Ku, D.S. ; Jeong, L.S. ; Yun, J.H. ; Choi, S.Y. ; Kim, J.B.
Author_Institution
Sung-Hwa Coll., Gangjin, South Korea
Volume
3
fYear
2003
fDate
4-6 Aug. 2003
Firstpage
2980
Abstract
Anti-fuse is used as the program switch element that selectively connects the logic blocks and the wire channels in FPGAs. A novel PIP anti-fuse structure consists of poly-Si/ONO/poly-Si layers. The anti-fuse showed a low on-state resistance of 140/spl sim/200 /spl Omega/. For the anti-fuse, the rupture voltage was about 7 V. The rupture time was very short time of 100/spl sim/500 ms.
Keywords
PROM; electronic engineering computing; field programmable gate arrays; logic circuits; silicon; 100 to 500 ms; 140 to 200 ohm; 7 V; FPGA; antifuse; electrical properties; logic circuit configuration; program switch element;
fLanguage
English
Publisher
ieee
Conference_Titel
SICE 2003 Annual Conference
Conference_Location
Fukui, Japan
Print_ISBN
0-7803-8352-4
Type
conf
Filename
1323856
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