• DocumentCode
    417948
  • Title

    A 12.5 GHz RF matrix amplifier in 180nm SOI CMOS

  • Author

    Park, Jinho ; Allstot, David J.

  • Author_Institution
    Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
  • Volume
    1
  • fYear
    2004
  • fDate
    23-26 May 2004
  • Abstract
    The design and implementation of an RF broadband amplifier in 180nm SOI CMOS is described. Using a parasitic-aware design and optimization methodology based on particle swarm optimization techniques, the RF matrix amplifier achieves a 15.1 dB forward gain (S21) over a 12.5GHz bandwidth. It dissipates 233mW.
  • Keywords
    CMOS integrated circuits; circuit optimisation; distributed amplifiers; microwave amplifiers; silicon-on-insulator; 12.5 GHz; 15.1 dB; 180 nm; 233 mW; RF broadband amplifier; RF integrated circuits; RF matrix amplifier; SOI CMOS; distributed amplifier; optimization methodology; parasitic-aware design; particle swarm optimization; travelling wave amplifiers; Bandwidth; Broadband amplifiers; CMOS technology; Distributed amplifiers; Optical amplifiers; Particle swarm optimization; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Transmission line matrix methods;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
  • Print_ISBN
    0-7803-8251-X
  • Type

    conf

  • DOI
    10.1109/ISCAS.2004.1328145
  • Filename
    1328145
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=417948