DocumentCode
421180
Title
High-speed and high-efficiency InP/InGaAs waveguide avalanche photodiodes for 40 Gbit/s transmission systems
Author
Yasuoka, Nami ; Kuwatsuka, Haruhiko ; Kuramata, Akito
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
1
fYear
2004
fDate
23-27 Feb. 2004
Firstpage
518
Abstract
InP/InGaAs waveguide avalanche photodiodes for 40 Gbit/s are demonstrated for the first time. The highest sensitivity of -19.0 dBm is achieved at BER of 10/sup -12/ in 40 Gbit/s PRBS 2/sup 31/- 1 NRZ signal.
Keywords
III-V semiconductors; avalanche photodiodes; error statistics; gallium arsenide; indium compounds; optical modulation; optical receivers; photodetectors; random sequences; 40 Gbit/s; BER; InP-InGaAs; InP/InGaAs waveguide avalanche photodiodes; NRZ signal; PRBS; bit error rate; nonreturn-to-zero; pseudo-random-bit-stream;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference, 2004. OFC 2004
Conference_Location
Los Angeles, CA, USA
Print_ISBN
1-55752-772-5
Type
conf
Filename
1359562
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