DocumentCode
421439
Title
Pulsed light absorption induced quantum well intermixing on InGaAsP/InGaAsP MQW using 532 nm irradiation
Author
Cho, S.H. ; Ram, R.J. ; Byun, D.S. ; Thom, R.L.
Author_Institution
Dept. of Electr. Eng. & Compiler Sci., MIT, Cambridge, MA, USA
Volume
2
fYear
2004
fDate
16-21 May 2004
Abstract
Pulsed light absorption at 532 nm induces and achieves 45 nm blue-shifts of the bandgap but no shift at 1064 nm, when the maximal fluence is 125 mJ/cm/sup 2/.
Keywords
energy gap; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser beam effects; semiconductor quantum wells; spectral line shift; 1064 nm; 532 nm; InGaAsP-InGaAsP; InGaAsP/InGaAsP MQW; bandgap; blue-shifts; laser irradiation; monolithic integration; pulsed light absorption; quantum well intermixing;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1360629
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