DocumentCode
421448
Title
A surface-normal coupled-quantum-well modulator at 1.55 microns
Author
Stievater, T.H. ; Rabinovich, W.S. ; Goetz, Peter G. ; Mahon, R. ; Bhiari, S.C.
Author_Institution
Naval Res. Lab., Washington, DC, USA
Volume
2
fYear
2004
fDate
16-21 May 2004
Abstract
We demonstrate that a surface-normal coupled-quantum-well InGaAs/InAlAs electroabsorptive modulator can provide optical modulation that is comparable to a square-well modulator at 1.55 /spl mu/m; but at much lower driving voltages.
Keywords
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; quantum well devices; semiconductor quantum wells; 1.55 micron; InGaAs-InAlAs; InGaAs/InAlAs modulator; coupled-quantum-well modulator; electroabsorptive modulator; optical modulation; surface-normal modulator;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1360640
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