DocumentCode
421476
Title
Reliable RT CW operation of GaInAsP/InP multiple-quantum-wire lasers fabricated by dry etching and regrowth method
Author
Yagi, Hideki ; Sano, Takuya ; Ohira, Kazuya ; Plumwongrot, Dhanorm ; Maruyama, Takeo ; Haque, Anisul ; Arai, Shigehisa
Author_Institution
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Volume
2
fYear
2004
fDate
16-21 May 2004
Abstract
A RT-CW operation of GaInAsP/InP 5-stacked quantum-wire lasers (23 nm wide) fabricated by EB lithography, CH/sub 4//H/sub 2/-RIE and OMVPE regrowth was achieved. No significant changes in performance were observable even after 7100 h under the RT-CW condition.
Keywords
III-V semiconductors; MOCVD; electron beam lithography; gallium arsenide; gallium compounds; optical fabrication; quantum well lasers; semiconductor device reliability; semiconductor growth; semiconductor quantum wires; sputter etching; vapour phase epitaxial growth; 20 degC; 23 nm; 7100 h; CH/sub 4//H/sub 2/-RIE; EB lithography; GaInAsP-InP; GaInAsP/InP multiple-quantum-wire lasers; OMVPE regrowth; continuous-wave operation; dry etching; regrowth method; reliable laser operation; room temperature operation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1360668
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