DocumentCode
422021
Title
Bandgap-tuned In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot lasers
Author
Kim, S. ; Bryce, A.C. ; Smith, C.J.M. ; Kowalski, O.P. ; Yanson, D. ; Marsh, J.H. ; Kaiander, I. ; Sellin, R.L. ; Bimberg, D.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
Bandgap tuned quantum dot lasers were fabricated and their performance compared to lasers fabricated from as-grown material. The output spectrum of the tuned lasers was blueshifted by 84 nm and significantly narrower than the as-grown devices.
Keywords
III-V semiconductors; energy gap; gallium arsenide; indium compounds; laser tuning; optical fabrication; photoluminescence; quantum dot lasers; spectral line shift; 84 nm; In/sub 0.5/Ga/sub 0.5/As-GaAs; bandgap-tuned In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot lasers; blueshift; output spectrum;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361485
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