DocumentCode
428938
Title
The effect of lateral guiding mechanism on noise characteristics in semiconductor lasers
Author
Zarefkar, A. ; Falahatpisheh, Afsaneh
Author_Institution
Dept. of Electr. Eng., Saveh Azad Univ., Iran
Volume
1
fYear
2004
fDate
4-6 Oct. 2004
Lastpage
206
Abstract
A comparison between intensity and frequency noise spectra and also the line shapes of gain-guided, weakly-index-guided, and strongly-index-guided semiconductor lasers are made using numerical solution of the field and carrier density rate equations including spontaneous emission noise.
Keywords
partial differential equations; semiconductor device noise; semiconductor lasers; spontaneous emission; carrier density rate equations; field density rate equations; frequency noise spectra; gain-guided semiconductor lasers; intensity noise spectra; lateral guiding mechanism; line shapes; noise characteristics; numerical simulation; numerical solution; spontaneous emission noise; strongly-index-guided semiconductor lasers; weakly-index-guided semiconductor lasers; Charge carrier density; Differential equations; Laser modes; Laser noise; Multi-stage noise shaping; Optical noise; Semiconductor device noise; Semiconductor lasers; Steady-state; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN
0-7803-8499-7
Type
conf
DOI
10.1109/SMICND.2004.1402840
Filename
1402840
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