A 5.5GHz, 25W GaAs power-FET chip at 26V operation

In this paper, we report the high voltage GaAs FEF optimized for C-hand. The high breakdown voltage (BVgd) of 55V was achieved by utilizing the gamma-shaped gate technology. The electrode geometry was optimized in the new of the reduction of the external gate capacitance to obtain higher gain in C-band. In addition, the unit gate width was set to 325um in the view of the gate resistance minimization. The developed FET chip exhibits output power level of 25W at operation voltage of 26V (and at 5.5GHz). The high power GaAs FET, featured with the operation voltage of 26V and the frequency of 5.5GHz, is the first report within our knowledge.