• DocumentCode
    430508
  • Title

    Measured attenuation of coplanar waveguide on 6H, p-type SiC and high purity semi-insulating 4H SiC through 800 K

  • Author

    Ponchak, G.E. ; Schwartz, Z.D. ; Alterovitz, S.A. ; Downey, A.N.

  • Volume
    1
  • fYear
    2004
  • fDate
    12-14 Oct. 2004
  • Firstpage
    41
  • Lastpage
    44
  • Abstract
    Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating Sic and 6H, p-type Sic is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SIC. The 4H-HPSI Sic is shown to have low attenuation and leakage currents over the entire temperature range.
  • Keywords
    Attenuation measurement; Calibration; Coplanar waveguides; Leakage current; Power transmission lines; Silicon carbide; Substrates; Temperature distribution; Temperature sensors; Wide band gap semiconductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2004. 34th European
  • Conference_Location
    Amsterdam, The Netherlands
  • Print_ISBN
    1-58053-992-0
  • Type

    conf

  • Filename
    1412511