Growth rate of a-Si:H film influenced by magnetic field gradient in MWECR CVD plasma system

Author

Yuehui, Hu ; Guanghua, Chen ; Zhu Xiuhong ; Rong Yandong ; Gao Zhuo ; Li Ying ; Zhou Huaien

Author_Institution

Dept. of Material Sci. & Eng., Beijing Univ. of Technol., China

fYear

2004

fDate

6-10 Sept. 2004

Firstpage

268

Lastpage

270

Abstract

In this paper, the magnetic field profiles, which were produced by three ways in the deposition chamber and plasma chamber of single coil divergent field microwave electronic circle resonance chemistry vapor deposition (MWECR CVD) system, was investigated. Then the magnetic field gradient of these magnetic field profiles was obtained quantitatively by using Lorentz fit. The results indicated that the gradient value of the magnetic field profile nearby the substrate, which was produced by a coil current with 137.7A if a SmCo permanent magnet was equipped below the substrate holder, is the largest, and the highest deposition rate of the hydrogenated amorphous silicon (a-Si:H) film was observed in this condition.

Keywords

hydrogenation; magnetic field effects; magnetic fields; plasma CVD; silicon; thin films; 137.7 A; Lorentz fit; MWECR CVD plasma system; MWECR CVD system; Si-H; SmCo permanent magnet; a-Si:H film; chemistry vapor deposition; deposition chamber; growth rate; hydrogenated amorphous silicon; magnetic field gradient; magnetic field profile; microwave electronic circle resonance; plasma chamber; single coil divergent field; substrate holder; Amorphous silicon; Chemical vapor deposition; Coils; Magnetic fields; Magnetic films; Magnetic resonance; Permanent magnets; Plasma chemistry; Semiconductor films; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International

Print_ISBN

0-7803-8437-7

Type

conf

DOI

10.1109/IVESC.2004.1414229

Filename

1414229