DocumentCode
430821
Title
Voltage-source controlled double-emitter phototransistors grown by low-pressure MOCVD
Author
Tan, S.W. ; Chen, H.R. ; Chu, M.Y. ; Hsu, M.K. ; Lin, T.S. ; Lour, W.S.
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Ocean Univ., Keelung, Taiwan
fYear
2004
fDate
6-10 Sept. 2004
Firstpage
277
Lastpage
278
Abstract
Single- and double-emitter heterojunction phototransistors with the same total emitter area have been fabricated and qualitatively investigated. The double emitters in two kinds of DE-HPTs are designed to have area ratio of 1:1 and 1:2, respectively. Both a positive and a negative voltage applied to the second emitter can control and enhance the collector photocurrent. It is found that 1:2 and 1:1 DE-HPTs exhibit 1.85- and 1.5-fold optical gain of that from a SE-HPT, respectively.
Keywords
MOCVD; heterojunction bipolar transistors; phototransistors; collector photocurrent; double-emitter heterojunction phototransistors; low-pressure MOCVD; single- emitter heterojunction phototransistors; voltage-source controlled double-emitter; Absorption; Electrodes; Fabrication; Heterojunctions; MOCVD; Optical saturation; Photoconductivity; Phototransistors; Stimulated emission; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International
Print_ISBN
0-7803-8437-7
Type
conf
DOI
10.1109/IVESC.2004.1414235
Filename
1414235
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