DocumentCode
432035
Title
Electroluminescence and infrared gain in strained GaSb quantum dots in silicon
Author
Fukatsu, S. ; Jo, M. ; Yasuhara, N. ; Sugawara, Y. ; Kawamoto, K.
Author_Institution
Graduate Sch. of Arts & Sci., Tokyo Univ., Japan
fYear
2004
fDate
29 Sept.-1 Oct. 2004
Firstpage
58
Lastpage
60
Abstract
Compound semiconductor quantum dots (QDs) buried in Si have been developed as a new class of band-gap engineered Si-based QDs. It is demonstrated that the excellent optical properties of GaSb/Si QDs allow gain in the near-infrared.
Keywords
III-V semiconductors; electroluminescence; energy gap; gallium compounds; infrared spectra; semiconductor quantum dots; GaSb quantum dots; GaSb-Si; Si; Si-based QD; band-gap engineering; compound semiconductor quantum dots; electroluminescence; infrared gain; strained quantum dots; Electroluminescence; Electrons; Light emitting diodes; Optical pumping; Photonic band gap; Quantum dots; Silicon; Stimulated emission; Temperature; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN
0-7803-8474-1
Type
conf
DOI
10.1109/GROUP4.2004.1416652
Filename
1416652
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