DocumentCode
432036
Title
Fabrication of p-i-n Si0.5Ge0.5 photodetectors on SiGe-on-insulator substrates
Author
Koh, S. ; Sawano, K. ; Shiraki, Y. ; Usami, N. ; Nakajima, K. ; Huang, X. ; Uda, S.
Author_Institution
Dept. of Appl. Phys., Tokyo Univ., Japan
fYear
2004
fDate
29 Sept.-1 Oct. 2004
Firstpage
61
Lastpage
63
Abstract
This study demonstrates the fabrication and evaluation of a Si0.5Ge0.5 p-i-n photodetector for 1.3 μm light detection on SiGe-on-insulator (SGOI) substrates with the Ge content of 0.5. Gas-source-MBE grown SiGe heterostructures on SGOI substrates are promising systems not only for high-speed SiGe hetero-devices, such as strained-Si and strained-Ge MOSFETs, but also for Si-based optoelectronic integrated circuits (OEIC´s).
Keywords
Ge-Si alloys; molecular beam epitaxial growth; p-i-n photodiodes; photodetectors; semiconductor growth; 1.3 mum; Si-based optoelectronic integrated circuits; Si0.5Ge0.5; Si0.5Ge0.5 photodetectors; SiGe heterostructures; SiGe-on-insulator substrates; gas-source-MBE growth; high-speed SiGe heterodevices; p-i-n photodetectors; photodetector fabrication; strained-Ge MOSFET; strained-Si MOSFET; Fabrication; Germanium silicon alloys; High speed optical techniques; Optical buffering; Optical refraction; Optical variables control; PIN photodiodes; Photodetectors; Silicon germanium; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN
0-7803-8474-1
Type
conf
DOI
10.1109/GROUP4.2004.1416653
Filename
1416653
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