DocumentCode
432565
Title
Non-linear electro thermal model of LDMOS power transistor coupled to 3D thermal model in a circuit simulator
Author
Guyonnet, M. ; Sommet, Raphael ; Quere, R. ; Bouisse, G.
Volume
2
fYear
2004
fDate
12-14 Oct. 2004
Firstpage
573
Lastpage
576
Abstract
In this article, we introdnee a new approach for Electro Thermal modeling of power LDMOS transistor. The electrical description of each intrinsic component is done with 3D Bi-Cubic Splines. The electrical model is coupled to a 3D thermal model stemming from FEA simulation. This full 3D Electro Thermal model is used with the ADS circuit simulator.
Keywords
Capacitance; Circuit simulation; Coupling circuits; Electric resistance; Power transistors; Pulse measurements; Radio frequency; Radiofrequency amplifiers; Temperature dependence; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2004. 34th European
Conference_Location
Amsterdam, The Netherlands
Print_ISBN
1-58053-992-0
Type
conf
Filename
1418881
Link To Document