High-Q fringing-field-enhanced capacitors (FFE) for deep submicron Silicon-MMICs

Novel capacitor structures for integration into a lOOnm CMOS foundry technology using Copper interconnections has been introduced. This capacitor makes extensive use of fringing fields associated with capacitively coupled vias in multilayer metallization Silicon MMICs. The results of the full wave analysis of this new Fringing-Field- Enhanced @FE) capacitor show substantial improvement in Q-factor in comparison with standard MIM-capacitors and conventional MIMIM-capacitors at the expense of reasonable increase in area. FFE-capacitors are especially useful for applications in high speed/ millimeter wave sub micrometer gate Si-MMICs.