• DocumentCode
    435747
  • Title

    Characteristics of 25nm MOSFETs with mechanical strain in the channel

  • Author

    Tao Wiu ; Liu, Xiaoyn ; Du, Gang ; Kang, Jingfeng ; Han, Ruqi

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • Volume
    1
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    321
  • Abstract
    The characteristics of typical 25nm p- and n-channel strained Si MOSFETs with mechanical stress applied in the channel are simulated by a commercial device simulator ISE. The impacts of the direction and magnitude of the stress on the device performances such as drive current and sub-threshold characteristics are investigated.
  • Keywords
    MOSFET; stress effects; 25 nm; ISE; MOSFET; Si; commercial device simulator; drive current; mechanical strain; mechanical stress; sub-threshold characteristics; Capacitive sensors; Lattices; MOSFETs; Manufacturing processes; Microelectronics; Photonic band gap; Silicides; Tensile stress; Tides; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1435017
  • Filename
    1435017
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=435747